EL2 distributions in vertical gradient freeze GaAs crystals

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Abstract
Spatial distributions of EL2 in undoped, semi-insulating GaAs crystals grown by a novel vertical gradient freeze (VGF) method are reported. As a result of the low-temperature gradients present during growth and post-solidification cooling, these crystals exhibit lower EL2 concentrations and lower dislocation densities than liquid-encapsulated Czochralski crystals. Both the EL2 distribution and dislocation density over the area of a wafer do not display the fourfold symmetric pattern prevalent for LEC-grown GaAs. The radial distributions of EL2 in as-grown VGF crystals have been found to be independent of the dislocation density. Axial and radial Hall-effect measurements are included. Thermal activation energies are also presented and the compensation mechanism for this material is discussed.