179 W recessed-gate AlGaN/GaN heterojunction FET with field-modulating plate
- 13 May 2004
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 40 (10) , 629-631
- https://doi.org/10.1049/el:20040421
Abstract
Microwave high-power performance has been achieved using a recessed-gate AlGaN/GaN heterojunction FET with a field-modulating plate. Making use of recessed-gate structure, the device exhibited an improved transconductance of 200 mS/mm with a maximum drain current of 900 mA/mm and a gate-drain breakdown voltage of 200 V. A 48 mm wide single-chip FET exhibited 179 W (3.7 W/mm) output power, 64% power-added efficiency, and 9.3 dB linear gain at a drain bias of 46 V. The saturated output power of 179 W is believed to be the highest ever achieved for any single-chip FETs.Keywords
This publication has 2 references indexed in Scilit:
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- AlGaN/GaN HEMTs-an overview of device operation and applicationsProceedings of the IEEE, 2002