Use of Nanostructures for High Brightness Light-Emitting Diodes
- 4 September 2011
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 84 references indexed in Scilit:
- Growth of III‐nitride quantum dots and their applications to blue‐green LEDsPhysica Status Solidi (a), 2008
- Evidence of compositional inhomogeneity in InxGa1−xN alloys using ultraviolet and visible Raman spectroscopy.Journal of Applied Physics, 2008
- Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wellsApplied Physics Letters, 2008
- Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphorsApplied Physics Letters, 2006
- AFM and temperature-dependent photoluminescence studies of the degree of localization induced by quantum-dot like states in InGaN single quantum well light emitting diodes grown by MOCVD on (0001) sapphireJournal of Crystal Growth, 2004
- Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxyJournal of Crystal Growth, 2004
- Epitaxial core–shell and core–multishell nanowire heterostructuresNature, 2002
- Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor depositionApplied Physics Letters, 1999
- Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDsJournal of Crystal Growth, 1998
- Order/disorder heterostructure in Ga0.5In0.5P with ΔEg = 160 meVJournal of Crystal Growth, 1994