Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
- 15 February 2004
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 262 (1-4) , 145-150
- https://doi.org/10.1016/j.jcrysgro.2003.10.082
Abstract
No abstract availableKeywords
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