Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy

This publication has 37 references indexed in Scilit:

• Investigations of growth of self-assembled GaInN–GaN islands on SiC substrate by metalorganic vapor phase epitaxy
  Journal of Crystal Growth, 2002
• Indium content determination related with structural and optical properties of InGaN layers
  Journal of Crystal Growth, 2001
• Spontaneous Formation of Indium-Rich Nanostructures on InGaN(0001) Surfaces
  Physical Review Letters, 2000
• First-principles calculations of the thermodynamic and structural properties of strained ${\mathrm{In}}_x{\mathrm{Ga}}_{1-x}\mathrm{N}$ and ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{N}$ alloys
  Physical Review B, 2000
• Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
  Applied Physics Letters, 1999
• Exciton localization in InGaN quantum well devices
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
• Polarity of epitaxial layers and (1210)prismatic defects in GaN and AIN grown on the (0001)_Sisurface of 6H-SiC
  Philosophical Magazine A, 1997
• Atomic Scale Indium Distribution in a GaN/In_0.43Ga_0.57N/Al_0.1Ga_0.9N Quantum Well Structure
  Japanese Journal of Applied Physics, 1997
• Theoretical Investigations of Thermodynamic Stability of III-III-N Semiconductor Alloys
  Japanese Journal of Applied Physics, 1997
• Elastic constants of gallium nitride
  Journal of Applied Physics, 1996