AFM and temperature-dependent photoluminescence studies of the degree of localization induced by quantum-dot like states in InGaN single quantum well light emitting diodes grown by MOCVD on (0001) sapphire
- 10 December 2004
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 272 (1-4) , 449-454
- https://doi.org/10.1016/j.jcrysgro.2004.08.076
Abstract
No abstract availableKeywords
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