Effect of Intentionally Formed `V-Defects' on the Emission Efficiency of GaInN Single Quantum Well

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Abstract
We investigated the effect of `V-defects' (hexagonal pits), intentionally formed at threading dislocation (TD) sites, on the emission efficiency of GaInN-based single quantum well (SQW) grown on GaN by metalorganic chemical vapor deposition. We examined the relations between the TD densities and the photoluminescence intensities of the SQW in which V-defects were intentionally formed, comparing them with the relations for a normal SQW under strong excitation conditions. As a result, we demonstrated that the intentionally formed V-defects increase the luminescence intensity and reduce the dependence of photoluminescence (PL) intensity on the TD density of underlying GaN.