Formation of epitaxial CoSi2 on Si(100): Role of the annealing ambient
- 18 January 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (3) , 243-245
- https://doi.org/10.1063/1.108978
Abstract
With a thin Ti layer interposed between a Si(100) substrate and a Co overlayer, the inversion of the Co and Ti films and the formation of a partly relaxed epitaxial CoSi2 layer on Si(100) can be obtained by steady‐state annealing in inert as well as reactive ambients. A reactive ambient chemically binds the Ti near the surface as an oxide or nitride layer, which preserves the bilayer structure during a high temperature treatment. In a nonreactive ambient, the Ti and CoSi2 layers react further, resulting in a uniform layer of Co0.25Ti0.75Si2 and CoSi2. An eptiaxial orientation of CoSi2 is retained even in that case.Keywords
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