Formation of buried and surface CoSi2 layers by ion implantation
- 1 January 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 45 (1-4) , 658-663
- https://doi.org/10.1016/0168-583x(90)90920-p
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Formation of buried CoSi2 layers by ion implantation and their stability at high temperaturesApplied Surface Science, 1989
- Mössbauer spectroscopy study of epitaxial and buried CoSi layersNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Formation of buried epitaxial Co silicides by ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Optimisation of SIMOX structures formed by ion beam synthesisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Synthesis of heteroepitaxial Si/CoSi2/Si structures by Co implantation into SiApplied Physics Letters, 1988
- Mesotaxy: Single-crystal growth of buried CoSi2 layersApplied Physics Letters, 1987
- Algorithms for the rapid simulation of Rutherford backscattering spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Epitaxial silicidesThin Solid Films, 1982