Formation of buried CoSi2 layers by ion implantation and their stability at high temperatures
- 1 September 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 38 (1-4) , 217-224
- https://doi.org/10.1016/0169-4332(89)90541-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Algorithms for the rapid simulation of Rutherford backscattering spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Epitaxial silicidesThin Solid Films, 1982