Bottom-emitting VCSEL's for high-CW optical output power
- 1 August 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 10 (8) , 1061-1063
- https://doi.org/10.1109/68.701502
Abstract
Bottom-emitting vertical-cavity surface-emitting InGaAs MQW lasers operating in the 980-nm wavelength regime have been designed for high continuous-wave optical output power. Devices of 200-/spl mu/m active diameter and optimized performance reach 350-mW maximum output power when mounted on a heat sink. 50-/spl mu/m-size lasers produce 100 mW at 25% electrical to optical power conversion efficiency. Thermal properties and size dependent basic characteristics are investigated in detail.Keywords
This publication has 8 references indexed in Scilit:
- 57% wallplug efficiency oxide-confined 850 nm wavelengthGaAs VCSELsElectronics Letters, 1997
- High power top-surface emitting oxide confined vertical-cavitylaser diodesElectronics Letters, 1996
- Size-dependent output power saturation of vertical-cavity surface-emitting laser diodesIEEE Photonics Technology Letters, 1996
- Selectively oxidised vertical cavity surface emittinglaserswith 50% power conversion efficiencyElectronics Letters, 1995
- Native-oxide defined ring contact for low threshold vertical-cavity lasersApplied Physics Letters, 1994
- High-power vertical-cavity surface-emitting lasersElectronics Letters, 1993
- Thermal resistance of top-surface-emitting vertical-cavity semiconductor lasers and monolithic two-dimensional arraysElectronics Letters, 1992
- Surface emitting semiconductor lasersIEEE Journal of Quantum Electronics, 1988