The Effects of Small Concentrations of Oxygen in RTP Annealing of Low Energy Boron, BF2 and Arsenic Ion Implants
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Simulation of Rapid Thermal Annealed Boron Ultra-Shallow Junctions in Inert and Oxidizing AmbientMRS Proceedings, 1998
- Characterization of ultra-shallow junctions with tapered groove profilometry and other techniquesPublished by AIP Publishing ,1998
- Dose-rate effects on the formation of ultra-shallow junctions with low-energy B+ and BF2+ ion implantsThin Solid Films, 1997