The improvement of GaN epitaxial layer quality by the design of reactor chamber spacing
- 1 April 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 200 (1-2) , 32-38
- https://doi.org/10.1016/s0022-0248(98)01259-7
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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