A new precursor for epitaxial growth of indium based semiconductors
- 1 January 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 146 (1-4) , 511-514
- https://doi.org/10.1016/0022-0248(94)00508-7
Abstract
No abstract availableKeywords
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- Residual acceptor impurities in undoped high-purity InP grown by metalorganic chemical vapor depositionApplied Physics Letters, 1990
- Sims and photoluminescence evaluation of high purity InP grown by organometallic vapor phase epitaxyJournal of Crystal Growth, 1988