Residual acceptor impurities in undoped high-purity InP grown by metalorganic chemical vapor deposition
- 19 February 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (8) , 752-754
- https://doi.org/10.1063/1.102702
Abstract
Zn and an unidentified acceptor species, labeled A1, are the only residual acceptors that have been observed in a wide variety of undoped high-purity InP samples grown by metalorganic chemical vapor deposition. Carbon is not incorporated at detectable concentrations as a residual acceptor in metalorganic chemical vapor deposited InP. However, the longitudinal and transverse optical phonon replicas of the free-exciton recombination occur at the same energy as the donor/conduction band-to-acceptor peaks for C acceptors in low-temperature photoluminescence spectra. Since these replicas are usually present in photoluminescence spectra measured under moderate or high optical excitation, care must be exercised so that these peaks are not misinterpreted as C-related transitions.Keywords
This publication has 15 references indexed in Scilit:
- Very high purity InP epilayer grown by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- A study of residual background doping in high purity indium phosphide grown by atmospheric pressure OMVPEJournal of Crystal Growth, 1987
- High mobility InP epitaxial layers prepared by atmospheric pressure MOVPE using trimethylindium dissociated from an adduct with 1,2-bis(diphenyl phosphino)ethaneJournal of Crystal Growth, 1986
- Very high mobility InP grown by low pressure metalorganic vapor phase epitaxy using solid trimethylindium sourceApplied Physics Letters, 1985
- Effects of growth temperature and [PH 3 ]/[In(C 2 H 5 ) 3 ] on purity of epitaxial InP grown by metalorganic chemical vapour depositionElectronics Letters, 1985
- Far-infrared studies of central-cell structure of shallow donors in GaAs and InPJournal of Physics C: Solid State Physics, 1984
- Photoluminescence identification of the C and Be acceptor levels in InPJournal of Electronic Materials, 1984
- Evidence of amphoteric behavior of Si in VPE InPJournal of Crystal Growth, 1983
- Metal organic vapour phase epitaxy of indium phosphideJournal of Crystal Growth, 1983
- The optical frequencies and dielectric constants of InPSolid State Communications, 1969