Deep Electron Traps in Undoped GaAs Grown by MOCVD
- 1 May 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (5A) , L296-298
- https://doi.org/10.1143/jjap.23.l296
Abstract
Deep electron traps in undoped GaAs grown by metalorganic chemical vapor deposition (MOCVD) have been investigated using DLTS measurement. Five electron traps were detected. The dominant trap shows an activation energy of 0.80±0.02 eV, which is probably the same level as EL2 in conventional VPE GaAs layers. The remaining four traps were only observed in samples grown with a particular trimethylgallium (TMG) source, and were below the detection limit (5×1011-5×1012 cm-3) with other TMG sources. These results strongly indicate that the four traps are due to impurities in the source material.Keywords
This publication has 9 references indexed in Scilit:
- AsH3 to Ga(CH3)3 Mole Ratio Dependence of Dominant Deep Levels in MOCVD GaAsJapanese Journal of Applied Physics, 1983
- On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopyJournal of Applied Physics, 1982
- Electrical and optical properties of deep levels in MOVPE grown GaAsJournal of Crystal Growth, 1981
- Deep levels in MOCVD GaAs grown under different Ga/As mol fractionsJournal of Crystal Growth, 1981
- Deep electron traps in organometallic vapor phase grown AlxGa1−xAsJournal of Applied Physics, 1980
- The trend of deep states in organometallic vapor-phase epitaxial GaAs with varying As/Ga ratiosApplied Physics Letters, 1980
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductorsApplied Physics A, 1977
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974