Bright Spots in the Image of Silicon Vidicon
- 1 February 1971
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 10 (2)
- https://doi.org/10.1143/jjap.10.213
Abstract
The origin of bright spots in the images of silicon vidicon is studied by investigating the etching patterns of the vidicon targets. It is found that (1) the bright spots are caused by a leaky diode which has a stacking fault generated during the course of oxidation in the (111) plane, and (2) there are two causes for stacking fault, that is, residual mechanical strain on the surface of the silicon wafer and grown-in defects.Keywords
This publication has 4 references indexed in Scilit:
- VACANCY CLUSTERS IN DISLOCATION-FREE SILICONApplied Physics Letters, 1970
- The Silicon Diode Array Camera TubeBell System Technical Journal, 1969
- Influence of Bulk and Surface Properties on Image Sensing Silicon Diode ArraysBell System Technical Journal, 1968
- Diffusion-Induced Stress and Lattice Disorders in SiliconJournal of the Electrochemical Society, 1966