Variation of refractive index in strained InxGa1−xAs-GaAs heterostructures
- 1 July 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (1) , 341-344
- https://doi.org/10.1063/1.335682
Abstract
InxGa1−xAs‐GaAs heterostructures and strained‐layer superlattices can be used as optical waveguides. For such applications it is important to know explicitly the refractive index variation with mismatch strain and with alloying in the ternary layer. Starting from the Kramers‐Kronig integral dispersion relations, we have developed a model from which the refractive index change in the ternary layer of InxGa1−xAs‐GaAs heterojunctions can be calculated. The results are presented and discussed. The expected changes in a superlattice have been qualitatively predicted.This publication has 28 references indexed in Scilit:
- Superlattice optical-cavity multiple-quantum-well (SOC-MQW) lasers grown by molecular-beam epitaxyElectronics Letters, 1984
- Effects of strain and layer thickness on the growth of InxGa1−xAs–GaAs strained-layer superlatticesJournal of Vacuum Science & Technology B, 1984
- Energy band-gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substratesJournal of Applied Physics, 1983
- A simple model for the index of refraction of GaAs–AlAs superlattices and heterostructure layers: Contributions of the states around ΓJournal of Vacuum Science & Technology B, 1983
- InGaAsP quaternary alloys: Composition, refractive index and lattice mismatchJournal of Electronic Materials, 1980
- Analysis of Resonant Brillouin Scattering in GaAsPhysica Status Solidi (b), 1979
- Deformation potentials of the direct and indirect absorption edges of GaPPhysical Review B, 1979
- Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAsPhysical Review B, 1977
- Intrinsic Piezobirefringence in GaSb, InAs, and InSbPhysical Review B, 1971
- Electron Mobility in Direct-Gap Polar SemiconductorsPhysical Review B, 1970