A time-dependent, surface potential based compact model for MOS capacitors

1 May 2001

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 22 (5) , 245-247
https://doi.org/10.1109/55.919243

Abstract

This paper presents a compact model for metal oxide semiconductor (MOS) capacitors, based on a time-dependent solution for the surface potential. This enables modeling of the frequency dependence of MOS capacitors, which is not possible with existing compact models. The model is implemented in Verilog-A, and is verified against two-dimensional (2-D) numerical device simulations with DESSIS.

Keywords

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