Characteristics of bistable CW GaAs junction lasers operating above the delay-transition temperature
- 1 June 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 6 (6) , 300-304
- https://doi.org/10.1109/jqe.1970.1076481
Abstract
The conditions for bistable operation of CW GaAs junction lasers are developed in terms of the previously published double-acceptor trap theory. The experimental CW operation of such devices is shown to agree well with the theoretical results. In addition the fabrication of these bistable lasers is described and several pulsed experiments are reported that indicate a significant increase in the number of trapping centers in the vicinity of the junction.Keywords
This publication has 15 references indexed in Scilit:
- Optimum Stripe Width for Continuous Operation of GaAs Junction LasersJournal of Applied Physics, 1969
- Temperature behavior of stimulated emission delays in GaAs diodes and a proposed trapping modelIEEE Journal of Quantum Electronics, 1968
- Characteristics of GaAs lasers near room temperatureIEEE Journal of Quantum Electronics, 1968
- CONTINUOUS OPERATION OF GaAs JUNCTION LASERS ON DIAMOND HEAT SINKS AT 200°KApplied Physics Letters, 1967
- Delay of the stimulated emission in GaAs laser diodes near room temperatureSolid-State Electronics, 1967
- HERMITE-GAUSSIAN MODE PATTERNS IN GaAs JUNCTION LASERSApplied Physics Letters, 1967
- Improved Room-Temperature Laser Performance in GaAs Diffused-Junction DiodesJournal of Applied Physics, 1967
- Analysis of a proposed bistable injection laserSolid-State Electronics, 1964
- QUENCHING OF GALLIUM-ARSENIDE INJECTION LASERSApplied Physics Letters, 1963
- Diffusion and oxide masking in silicon by the box methodSolid-State Electronics, 1960