Ka-band power PHEMT on-wafer characterization using prematched structures
- 31 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1343-1346 vol.3
- https://doi.org/10.1109/mwsym.1993.277125
Abstract
High-power Ka-band power amplifiers have been developed using monolithic prematched structures utilizing power InGaAs pseudomorphic high-electron-mobility-transistor (PHEMT) devices. On-wafer load-pull impedance data on structures containing 0.15- mu m*400- mu m, 0.15- mu m*800- mu m, and 0.15- mu m*1600- mu m devices were obtained. Based on this information, a two-stage MIC (microwave integrated circuit) amplifier consisting of a single 1600- mu m monolithic prematched structure driving four 1600- mu m monolithic prematched structures was realized. The amplifier achieved an output power of 1.6 W (32.2 dBm) with 8.1 dB gain at 35 GHz.<>Keywords
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