Strained GaAs layers grown on GaAs substrates with an intermediate GaAs1−xPx buffer layer
- 1 July 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (1) , 198-203
- https://doi.org/10.1063/1.350308
Abstract
The possibility of growing strained GaAs layers on GaAs (100) substrates using a nonpseudomorphic GaAs1−xPx buffer layers is examined. It is demonstrated that by varying the phosphorus content in a thick buffer (significantly thicker than the critical thickness for strain relaxation), uniform biaxial stress magnitude can be monitored in GaAs, e.g., 8 kbar biaxial compression can be achieved by a P composition of 0.16 in the alloy. After an x‐ray diffraction study of strain relaxation in the buffers, low temperature photoluminescence measurements are used to evaluate the effect of such a stress upon monitoring the near band gap properties of GaAs layers.This publication has 15 references indexed in Scilit:
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