MBE growth of quantum-size Si-dots on SiC(0001) monitored by RHEED

This publication has 10 references indexed in Scilit:

• Self-assembled island formation in heteroepitaxial growth
  Applied Physics Letters, 1997
• Resonant tunneling through a self-assembled Si quantum dot
  Applied Physics Letters, 1997
• Optical monitoring of the development of InAs quantum dots on GaAs(001) by reflectance anisotropy spectroscopy
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
• SiC(0001)3 × 3-Si surface reconstruction — a new insight with a STM
  Surface Science, 1996
• Concepts in Surface Physics
  Published by Springer Nature ,1993
• In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)As
  Applied Physics Letters, 1992
• Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films of ${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As on GaAs(100)
  Physical Review B, 1992
• Surface Diffusion Coefficients on Stranski-Krastanov Layers
  Japanese Journal of Applied Physics, 1990
• Festkörperphysik
  Published by Springer Nature ,1990
• Adsorption, potential maps and diffusion of Si, C, and SiC on A Si(111) surface
  Surface Science, 1985