Determination of Band Discontinuity in Amorphous Silicon Heterojunctions
- 1 March 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (3A) , L314
- https://doi.org/10.1143/jjap.27.l314
Abstract
A new procedure of determining the band offset in semiconductor heterojunctions has been developed. The valence band spectra for ultrathin amorphous silicon nitride (a-Si1-x N x :H) or silicon carbide (a-Si1-x C x :H) deposited on hydrogenated amorphous silicon (a-Si:H) have been measured by X-ray photoelectron spectroscopy. It is demonstrated that the empirical deconvolution of measured spectra yields the valence band discontinuity in a-Si1-x N x :H/a-Si:H and a-Si1-x C x :H/a-Si:H systems.Keywords
This publication has 6 references indexed in Scilit:
- Electronic structure of silicon nitride and amorphous silicon/silicon nitride band offsets by electron spectroscopyJournal of Applied Physics, 1987
- Amorphous Silicon Superlattice Thin Film TransistorsJapanese Journal of Applied Physics, 1987
- Photoemission studies of a-SiNx:H/a-Si:H heterojunctionsJournal of Non-Crystalline Solids, 1985
- Study of the band discontinuities at the a-SiH/c-Si interface by internal photoemissionJournal of Non-Crystalline Solids, 1985
- Photoemission studies of a-SixC1−x:H/a-Si and a-SixC1−x:H/ hydrogenated amorphous silicon heterojunctionsApplied Physics Letters, 1984
- Valency Control of Glow Discharge Produced a-SiC:H and its Application to Heterojunction Solar CellsInternational Journal of Sustainable Energy, 1982