Effects of isotopic disorder on the Raman spectra of crystals: Theory andab initiocalculations for diamond and germanium
- 1 April 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 61 (14) , 9387-9392
- https://doi.org/10.1103/physrevb.61.9387
Abstract
We present a method to study the effects of isotopic composition on the Raman spectra of crystals, in which disorder is treated exactly without resorting to any kind of mean-field approximation. The Raman cross section is expressed in terms of a suitable diagonal element of the vibrational Green’s function, which is accurately and efficiently calculated using the recursion technique. This method can be used in conjunction with both semiempirical lattice-dynamical models and with first-principles interatomic force constants. We have applied our technique to diamond and germanium using the most accurate interatomic force constants presently available, obtained from density-functional perturbation theory. Our method correctly reproduces the light scattering in diamond—where isotopic effects dominates over the anharmonic ones—as well as in germanium, where anharmonic effects are larger.Keywords
This publication has 26 references indexed in Scilit:
- Isotopic-disorder induced Raman scattering in diamondSolid State Communications, 1993
- Hyperfine populations prior to muon capturePhysical Review A, 1993
- Vibrational band modes in germanium: Isotopic disorder-induced Raman scatteringPhysical Review Letters, 1993
- Lattice dynamics and Raman spectra of isotopically mixed diamondPhysical Review B, 1992
- Comparison of the phonon spectra ofand natural Ge crystals: Effects of isotopic disorderPhysical Review B, 1991
- Electronic structure of randomAs alloys: Test of the ‘‘special-quasirandom-structures’’ descriptionPhysical Review B, 1990
- 1 3C-doped diamond: Raman spectraJournal of Applied Physics, 1988
- Green’s-function approach to linear response in solidsPhysical Review Letters, 1987
- Ab initiocalculation of the low-frequency Raman cross section in siliconPhysical Review B, 1986
- The theory and properties of randomly disordered crystals and related physical systemsReviews of Modern Physics, 1974