Ab initiocalculation of the low-frequency Raman cross section in silicon
- 15 April 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (8) , 5969-5971
- https://doi.org/10.1103/physrevb.33.5969
Abstract
The macroscopic polarizability of silicon is calculated from first principles as a function of the lattice distortion induced by a zone-center optical phonon. The electronic response to the electric field is dealt with by dielectric matrices, and the lattice distortion is treated by frozen-phonon techniques. Our results compare quite well with the most recent measurements of the one-phonon Raman cross section.Keywords
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