Growth of bright (300 K) luminescence InAsxP1−x (λ=1.7–2.1 μ) on InP substrates by molecular beam epitaxy
- 15 April 1984
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (8) , 2901-2903
- https://doi.org/10.1063/1.333330
Abstract
We have successfully prepared bright room‐temperature luminescence InAsxP1−x epilayers in the wavelength region 1.7–2.1 on InP substrates by molecular beam epitaxy. The dependence of the InAs composition in the InAsxP1−x epilayers on substrate temperature during growth was investigated. It was found that for the same P2/As2 (dimers used) flux ratio, the InAs composition increased with increasing substrate temperature in the range 530–620 °C. This is due to the faster decrease of the sticking coefficient of P2 with increasing substrate temperature than that of As2. This composition‐temperature dependence can be utilized conveniently for growing composition‐graded layers by simply increasing the substrate growth temperature.This publication has 6 references indexed in Scilit:
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