Spin-lattice relaxation at high temperatures in heavily doped n-type silicon
- 16 February 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 45 (2) , K101-K104
- https://doi.org/10.1002/pssa.2210450246
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- ESR in heavily doped n-type silicon near a metal-nonmetal transitionPhysica Status Solidi (a), 1976
- Metal-Semiconductor Transition in Heavily Doped n–Type SiliconPhysica Status Solidi (a), 1975
- Absolute Spin Susceptibilities and Other ESR Parameters of Heavily Doped-Type Silicon. I. Metallic SamplesPhysical Review B, 1972
- Semiconductor-to-Metal Transition in-Type Group IV SemiconductorsReviews of Modern Physics, 1968
- Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. IIJournal of the Physics Society Japan, 1966
- Spin-lattice relaxation of conduction electrons in siliconProceedings of the Physical Society, 1964