Shape preservation of Ge/Si(001) islands during Si capping
- 25 February 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (8) , 1438-1440
- https://doi.org/10.1063/1.1453476
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Reversible Shape Evolution of Ge Islands on Si(001)Physical Review Letters, 2001
- Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dotsSurface Science, 2001
- Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor depositionApplied Physics Letters, 2000
- Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formationPhysical Review B, 2000
- Transition States Between Pyramids and Domes During Ge/Si Island GrowthScience, 1999
- Germanium “quantum dots” embedded in silicon: Quantitative study of self-alignment and coarseningApplied Physics Letters, 1999
- Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to DomesScience, 1998
- Mechanism of organization of three-dimensional islands in SiGe/Si multilayersApplied Physics Letters, 1997
- Magnetron sputter epitaxy of SimGen/Si(001) strained-layer superlatticesApplied Physics Letters, 1994
- InAs island-induced-strain driven adatom migration during GaAs overlayer growthApplied Physics Letters, 1994