Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition
- 17 July 2000
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (3) , 370-372
- https://doi.org/10.1063/1.126979
Abstract
We have investigated the composition and the strain profile of Ge/Si self-assembled quantum dots. The quantum dots, grown by low-or high-pressure chemical vapor deposition, were covered by a silicon cap layer. The composition and the strain were measured by the selected area transmission electron diffraction of a single quantum dot. The self-assembled quantum dots exhibit a quadratic deformation. No lateral relaxation of the lattice is observed from the main part of the quantum dot. An average composition of Ge around 50% is deduced. The average composition is found dependent on the size of the islands. This composition is correlated to the photoluminescence energy.Keywords
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