AlGaInP QUANTUM WELL LASERS
- 1 January 1993
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 137 references indexed in Scilit:
- GaxIn1−xP/GaAs grown by gas source molecular beam epitaxy using phosphineJournal of Crystal Growth, 1991
- MOVPE of AlGaInP/GaInP heterostructures for visible lasersJournal of Crystal Growth, 1991
- Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVDJournal of Crystal Growth, 1988
- Disordering of the ordered structure in MOCVD-grown GaInP and AlGaInP by impurity diffusion and thermal annealingJournal of Crystal Growth, 1988
- Stimulated emission in In0.5(AlxGa1−x)0.5P quantum well heterostructuresJournal of Crystal Growth, 1988
- Aging characteristics of AlGaInP/GaInP visible-light lasers (λ L = 678 nm)Electronics Letters, 1987
- Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasersApplied Physics Letters, 1986
- Anomalous length dependence of threshold for thin quantum well AlGaAs diode lasersElectronics Letters, 1986
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986
- Thermal conductivity of silicon, germanium, III–V compounds and III–V alloysSolid-State Electronics, 1967