Measurement of the onset of quasi-saturation in bipolar transistors
- 30 November 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (11) , 1187-1192
- https://doi.org/10.1016/0038-1101(74)90163-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Collector models for bipolar transistorsSolid-State Electronics, 1973
- High current regimes in transistor collector regionsIEEE Transactions on Electron Devices, 1973
- P–N junction capacitance†International Journal of Electronics, 1971
- Current gain and cutoff frequency falloff at high currentsIEEE Transactions on Electron Devices, 1969
- Temperature dependence of hot electron drift velocity in silicon at high electric fieldSolid-State Electronics, 1968
- Temperature coefficient of resistivity of silicon and germanium near room temperatureSolid-State Electronics, 1968
- The equivalent circuit of a transistor with a lightly doped collector operating in saturationSolid-State Electronics, 1968
- An investigation into transistor cross-modulation at VHF under AGC conditionsIEEE Transactions on Electron Devices, 1967
- The saturation characteristics of high-voltage transisitorsProceedings of the IEEE, 1967
- The Electrical Conductivity and Hall Effect of SiliconProceedings of the Physical Society, 1958