Optical characterization of heavily doped silicon
- 30 November 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (11) , 1117-1120
- https://doi.org/10.1016/0038-1101(87)90075-x
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Band-gap narrowing in heavily doped silicon at 20 and 300 K studied by photoluminescencePhysical Review B, 1985
- Heavily doped silicon studied by luminescence and selective absorptionSolid-State Electronics, 1985
- Bound state energy and line width due to the resonant interaction between optical phonon and electronic transitions in degenerate siliconSolid-State Electronics, 1985
- Electron and phonon self-energies in heavily doped germanium and siliconSolid-State Electronics, 1985
- Effect of heavy doping on the optical properties and the band structure of siliconPhysical Review B, 1984
- Photoluminescence and excitation spectroscopy in heavily doped- and-type siliconPhysical Review B, 1984
- Band-gap narrowing from luminescence in p-type SiJournal of Applied Physics, 1983
- Comparison of band-gap shrinkage observed in luminescence from n+-Si with that from transport and optical absorption measurementsApplied Physics Letters, 1983
- Photoluminescence in heavily doped Si: B and Si: AsSolid State Communications, 1981
- On the origin of photoluminescence in heavily-doped siliconSolid State Communications, 1979