Photoconductive properties of the Er-doped InP
- 24 January 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (4) , 466-468
- https://doi.org/10.1063/1.111131
Abstract
The photoconductive properties of Er‐doped InP layers prepared by atmospheric pressure metalorganic vapor phase epitaxy were investigated. Two Er3+‐related photoconductive transitions were observed at 0.807 and 1.27 eV. The 0.807 eV transition involves a 4f‐shell intracenter transition. The 1.27 eV transition is attributed to a free to bound transition involving the Er3+‐related trapping center. Presumably this trapping level is important in the energy transfer process determining the Er3+‐related emission efficiency in InP. A model is developed to explain the photoconductive response of the Er‐doped materials.Keywords
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