Simple analysis of transient photoconductivity for determination of localized-state distributions in amorphous semiconductors using Laplace transform
- 1 April 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (7) , 3541-3542
- https://doi.org/10.1063/1.358582
Abstract
A method has been proposed for the determination of localized‐state distributions in amorphous semiconductors from transient photoconductivity using Laplace transforms [H. Naito, J. Ding, and M. Okuda, Appl. Phys. Lett. 64, 1830 (1994)]. The method is applicable to both pre‐ and postrecombination regimes of transient photoconductivity, and to amorphous semiconductors exhibiting either nondispersive or dispersive transport. To simplify the analysis of the method, a new approach with the same advantages of the method is presented.This publication has 3 references indexed in Scilit:
- Determination of localized-state distributions in amorphous semiconductors from transient photoconductivityApplied Physics Letters, 1994
- Determination of gap-state distributions in amorphous semiconductors from transient photocurrents using a fourier transform techniqueSolid State Communications, 1992
- Photocurrent Transient Spectroscopy: Measurement of the Density of Localized States in -Physical Review Letters, 1981