The observation of a sharp peak in the deep-level photoconductivity spectrum of GaAs(Cr) due to the Cr2+(5T2-5E) 'intracentre' transition

Publisher Website
Google Scholar
Abstract
The 0.82 eV intracentre transition of Cr2+(5T2 to 5E) in GaAs is observed as a very sharp peak in the low-temperature photoconductivity response. The dependence of the photoconductivity on temperature and electric field is discussed and a comparison is made with the corresponding line in absorption. The results demonstrate that the 5E excited state is at an energy above the band edge and that photoconductivity arises from auto-ionisation of the 5E excited state whereby an electron is ejected into the conduction band continuum.