Microstructural transition and degraded opto-electronic properties in amorphous SiGe:H alloys
- 21 June 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (25) , 3267-3269
- https://doi.org/10.1063/1.109095
Abstract
The microstructure of amorphous Si1−xGex:H films with xx=0.2. A corresponding sharp change in the anisotropic character of the SAXS is consistent with a transition to a columnar‐like microstructure above x=0.2. The correlated results provide strong evidence for a direct link between degraded opto‐electronic properties and the increased heterogeneity associated with the microstructural transition.Keywords
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