Microvoids in amorphous Si1−xCx:H alloys studied by small-angle x-ray scattering
- 21 August 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (8) , 783-785
- https://doi.org/10.1063/1.101779
Abstract
The microstructure of hydrogenated amorphous silicon-carbon alloys has been analyzed by small-angle x-ray scattering, infrared absorption, and density measurements. Decreasing density with C incorporation is due to microvoids about 0.6 nm in average radius, which are either approximately spherical in shape or randomly oriented nonspheres. The microvoid number density increases from about 5×1019/cm3 for a-Si:H to about 4×1020/cm3 for a-Si0.7 C0.3 :H. The CH3 species probably causes the enhanced microvoid formation in these alloys. A large fraction of the microvoid surfaces is not hydrogenated.Keywords
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