Interaction of Co with SiGe epilayer grown on Si(100)
- 4 February 1999
- journal article
- Published by Elsevier in Surface Science
- Vol. 421 (1-2) , 100-105
- https://doi.org/10.1016/s0039-6028(98)00826-7
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Fabrication of buried epitaxial CoSi2 layer through selective diffusionApplied Physics Letters, 1997
- Growth of epitaxial CoSi2 films on strained Si1 − xGexSi(001) heterostructuresJournal of Crystal Growth, 1996
- Behavior of ultrathin layers of Co on Si and Ge systemsApplied Surface Science, 1996
- Characterization of cobalt annealed on silicon-germanium epilayersThin Solid Films, 1994
- Growth and characterization of epitaxial Ni and Co silicidesMaterials Science Reports, 1992
- Interactions between binary metallic alloys and Si, GeSi and GaAsMaterials Science Reports, 1992
- Formation of titanium and cobalt germanides on Si (100) using rapid thermal processingJournal of Electronic Materials, 1992
- Preferential PtSi Formation in Thermal Reaction between Pt and Si0.8Ge0.2 MBE LayersJapanese Journal of Applied Physics, 1990
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Ion beam crystallography of surfaces and interfacesSurface Science Reports, 1985