Preferential PtSi Formation in Thermal Reaction between Pt and Si0.8Ge0.2 MBE Layers
- 1 June 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (6A) , L850-852
- https://doi.org/10.1143/jjap.29.l850
Abstract
Thermal reactions between Pt and Si0.8Ge0.2 MBE layers were studied by sputtering AES and X-ray diffraction measurements. Pt(1000 A)/Si0.8Ge0.2(1000 A) annealed at 300°C for 3 hours or at 400°C for 1 hour formed Pt2(Si0.8Ge0.2)1 or Pt1(Si0.8Ge0.2)1, respectively. The sample annealed at 400°C for 16 hours showed a slight accumulation of Ge at the Pt(SiGe)/Si interface, and the annealing at 500°C for 1 hour repelled the Ge from the surface Pt(SiGe) layer to form a Ge-rich SiGe epitaxial layer at the PtSi/Si interface. These results suggest a stronger bonding of Pt-Si than Pt-Ge and a possible preferential formation of PtSi at the interface even for lower annealing temperatures.Keywords
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