Issues in metal/semiconductor contact design and implementation
- 31 December 1989
- journal article
- Published by Elsevier in Solar Cells
- Vol. 27 (1-4) , 177-189
- https://doi.org/10.1016/0379-6787(89)90027-6
Abstract
No abstract availableKeywords
This publication has 42 references indexed in Scilit:
- Properties of TiSi2 as an encroachment barrier for the growth of selective tungsten on siliconJournal of Vacuum Science & Technology B, 1987
- Titanium nitride local interconnect technology for VLSIIEEE Transactions on Electron Devices, 1987
- Formation of TiN/TiSi2/p+-Si/n-Si by rapid thermal annealing (RTA) silicon implanted with boron through titaniumIEEE Electron Device Letters, 1985
- Effect of phase separation on the electrical properties of the interface between Ni-Ta thin films and GaAs substrateApplied Physics Letters, 1985
- Refractory metal silicides: Thin-film properties and processing technologyIEEE Transactions on Electron Devices, 1983
- Ohmic contacts to III–V compound semiconductors: A review of fabrication techniquesSolid-State Electronics, 1983
- Alloyed ohmic contacts to GaAsJournal of Vacuum Science and Technology, 1981
- Shallow and parallel silicide contactsJournal of Vacuum Science and Technology, 1981
- Alloying reaction in thin nickel films deposited on GaAsThin Solid Films, 1980
- A review of the theory and technology for ohmic contacts to group III–V compound semiconductorsSolid-State Electronics, 1975