Monolithic high-speed CMOS-photoreceiver

1 February 1999

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters

Vol. 11 (2) , 254-256
https://doi.org/10.1109/68.740721

Abstract

Results of optoelectronic integrated CMOS receivers for applications in optical data transmission and in optical interconnects are presented. The rise and fall times of the integrated p-i-n photodiodes (PDs) are 0.19 and 0.24 ns, respectively, corresponding to -3 dB bandwidths in excess of 1.4 GHz. These PDs combine this high speed with a high quantum efficiency. Rise and fall times of 0.53 and 0.69 ns, respectively, are obtained for CMOS optoelectronic integrated circuits (OEICs) with integrated p-i-n PD's. These OEICs in 1.0 /spl mu/m CMOS technology handle a data rate of 622 Mb/s with a single-supply voltage of 3.3 V.

Keywords

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