Resonant-cavity GaAs/InGaAs/AlAs photodiodes with a periodic absorber structure
- 12 July 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (2) , 141-143
- https://doi.org/10.1063/1.110379
Abstract
Resonant‐cavity photodiodes with a periodic absorber structure are demonstrated. The photodiode consists of three thin InGaAs absorbing layers located at the antinodes of standing wave optical field in a resonant cavity. The bottom mirror of the resonant cavity is formed by a GaAs/AlAs quarter‐wave stack, while the top mirror is formed by the GaAs/air interface. Theoretical estimation based on the standing wave effect gives 70% peak quantum efficiency at the resonant wavelength. The peak quantum efficiency of this photodiode, as measured by a calibrated Si photodetector, enhanced by 30% as compared to a conventional resonant‐cavity photodiode with a single absorbing layer of the same overall thickness. The observed enhancement in quantum efficiency is consistent with theory.Keywords
This publication has 11 references indexed in Scilit:
- A theoretical study of resonant cavity-enhanced photodectectors with Ge and Si active regionsJournal of Applied Physics, 1992
- Wavelength demultiplexing optical switchApplied Physics Letters, 1992
- Resonant-cavity InGaAlAs/InGaAs/InAlAs phototransistors with high gain for 1.3–1.6 μmApplied Physics Letters, 1992
- Near-infrared high-gain strained layer InGaAs heterojunction phototransistors: Resonant periodic absorptionApplied Physics Letters, 1991
- Resonant cavity-enhanced (RCE) photodetectorsIEEE Journal of Quantum Electronics, 1991
- Wavelength demultiplexing heterojunction phototransistorElectronics Letters, 1990
- Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collectorApplied Physics Letters, 1990
- Multilayer reflectors by molecular-beam epitaxy for resonance enhanced absorption in thin high-speed detectorsJournal of Vacuum Science & Technology B, 1990
- MOCVD growth of GaAs/AlGaAs wavelength resonant periodic gain vertical cavity surface-emitting laserElectronics Letters, 1989
- Surface-emitting, multiple quantum well GaAs/AlGaAs laser with wavelength-resonant periodic gain mediumApplied Physics Letters, 1988