Zn diffusion-induced disorder in AlAs/GaAs superlattices
- 1 October 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (10) , 841-846
- https://doi.org/10.1088/0268-1242/4/10/002
Abstract
Zn diffusion into AlAs/GaAs superlattices has been studied experimentally using transmission electron microscopy and secondary ion mass spectroscopy. It has been found that microdefects are present near the Zn-diffusion front. Analysis of these defects has shown them to be interstitial dislocation loops. It is believed that the diffusion of Zn into AlAs/GaAs multiquantum wells and superlattices is similar to that of Zn into GaAs. This provides evidence for the interstitial mechanism for the enhancement of the interdiffusion of the GaAs/AlAs superlattices.Keywords
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