Preparation and Properties of a-Si Films Deposited at a High Deposition Rate under a Magnetic Field

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Abstract
An rf plasma decomposition of SiH4 under a magnetic field was investigated. It was confirmed by the optical emission spectra that a high-electron-density plasma can be produced under a magnetic field. High-quality a-Si films with a photosensitivity of σph/σd of 7×105 were obtained at a high deposition rate of 10 Å/s under the magnetic field. The a-Si solar cells with i-layers deposited at a high deposition rate under a magnetic field have a higher open-circuit voltage and a higher conversion efficiency than those without the magnetic field; a conversion efficiency of 10.1% under AM1(100mW/cm2) illumination was obtained at a deposition rate of 10 Å/s. The rf plasma decomposition of SiH4 under a magnetic field is thought to be very suitable for fabricating a-Si solar cells with a high conversion efficiency at a high deposition rate.