High-rate deposition of amorphous hydrogenated silicon from a SiH4 plasma
- 15 March 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (6) , 600-602
- https://doi.org/10.1063/1.94841
Abstract
An extremely high deposition rate of amorphous hydrogenated silicon has been achieved by employing a new rf discharge technique. The deposition rate has been increased to more than 50 Å/s at a substrate temperature of 200 °C without accompanying any appreciable deterioration in the electronic and structural properties as compared to those of specimens prepared at a conventional deposition rate (∼1 Å/s). Thermal stability of the high-rate samples is improved with respect to that of low-rate specimens.Keywords
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