Transition layers at the SiO2∕SiC interface
- 14 July 2008
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 93 (2) , 022108
- https://doi.org/10.1063/1.2949081
Abstract
The electrical performance of SiC-based microelectronic devices is strongly affected by the densities of interfacial traps introduced by the chemical and structural changes at the Si O 2 ∕ Si C interface during processing. We analyzed the structure and chemistry of this interface for the thermally grown Si O 2 ∕ 4 H - Si C heterostructure using high-resolution transmission electron microscopy(TEM), Z -contrast scanning TEM, and spatially resolved electron energy-loss spectroscopy. The analyses revealed the presence of distinct layers, several nanometers thick, on each side of the interface; additionally, partial amorphization of the top SiCsurface was observed. These interfacial layers were attributed to the formation of a ternary Si–C–O phase during thermal oxidation.Keywords
This publication has 18 references indexed in Scilit:
- Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETsMaterials Science Forum, 2006
- On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor DevicesMaterials Science Forum, 2006
- Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent RecombinationMaterials Science Forum, 2006
- N2O Processing Improves the 4H-SiC:SiO2 InterfaceMaterials Science Forum, 2002
- Consequence of Nanometer‐Scale Property Variations to Macroscopic Properties of CrOCN Thin FilmsJournal of the American Ceramic Society, 2001
- High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopyApplied Physics Letters, 2000
- Excitonic Effects in Core-Excitation Spectra of SemiconductorsPhysical Review Letters, 2000
- Atomic-Scale Engineering of the SiC-SiO2 InterfaceMaterials Science Forum, 2000
- Atomic-Scale Mechanisms of Oxygen Precipitation and Thin-Film Oxidation of SiCPhysical Review Letters, 1999
- The Oxidation of Silicon in Dry Oxygen, Wet Oxygen, and SteamJournal of the Electrochemical Society, 1963