Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination
- 15 October 2006
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 527-529, 1011-1014
- https://doi.org/10.4028/www.scientific.net/msf.527-529.1011
Abstract
In this study we report on spin-dependent recombination-detected electron spin resonance of interface/near interface defects in 4H-SiC metal oxide semiconductor field effect transistors with thermally grown SiO2 gate stacks. We demonstrate a distribution of performance-limiting defects which extends beyond the SiC/SiO2 boundary into the SiC bulk. Our results strongly indicate that the defects are intrinsic and we tentatively identify them as silicon vacancy-like centers on the basis of strong, but imprecisely-resolved, 29Si hyperfine sidepeaks in the magnetic resonance spectrum.Keywords
This publication has 19 references indexed in Scilit:
- Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect TransistorsMaterials Science Forum, 2005
- Observation of trapping defects in 4H–silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombinationApplied Physics Letters, 2005
- Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect TransistorsMaterials Science Forum, 2004
- Structure of 6H silicon carbide/silicon dioxide interface trapping defectsApplied Physics Letters, 2004
- Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistorsJournal of Applied Physics, 2002
- Insulator investigation on SiC for improved reliabilityIEEE Transactions on Electron Devices, 1999
- What can electron paramagnetic resonance tell us about the Si/SiO2 system?Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Advances in SiC MOS TechnologyPhysica Status Solidi (a), 1997
- High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29Si hyperfine spectraMicroelectronic Engineering, 1993
- Spin dependent recombination at the silicon/silicon dioxide interfaceColloids and Surfaces, 1990