High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29Si hyperfine spectra
- 1 August 1993
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 22 (1-4) , 273-276
- https://doi.org/10.1016/0167-9317(93)90172-2
Abstract
No abstract availableKeywords
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