Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors
- 15 June 2004
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 457-460, 477-480
- https://doi.org/10.4028/www.scientific.net/msf.457-460.477
Abstract
No abstract availableKeywords
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